Ditemukan 1 dokumen yang sesuai dengan query
Sanjay S. Chopade
"
FinFET (Fin Field-Effect
Transistor) technology has recently seen a major increase in adoption
for use in integrated circuits because of its high immunity to short channel
effects and its further ability to scale
down. Previously, a major research contribution was made to reduce the leakage current in the
conventional bulk devices. So many different alternatives like bulk isolation and oxide isolation are all having some pros and
cons. Here in this paper, we present a novel pile gate FinFET structure to
reduce ...
"
2017
J-Pdf
Artikel Jurnal Universitas Indonesia Library
