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Ditemukan 2 dokumen yang sesuai dengan query

Investigation of annealing effect on the forward bias and leakage current changes of P-Type 6H-Sic schottky diodes with SiO2 ramp profile after irradiated UP To 1.75 MGY (Application for nuclear fuel elements facilities)

" Annealing effect on the electrical properties change of P - type 6H-Sic schottky diodes with SiO2 ramp profile after irradiated up to 1.75 MGy at RT (Room Temperature) were investigated. A perpendicular edge termination based on oxide ramp profile around the schottky contact is used on Al schottky rectifier fabricated on a 10 um p--type 6H-SiC epi-layer on P-type 6H-SiC substrate (3.5 off, Si face) Na : 5.9 x 10 15/cm ... "

Artikel Jurnal Universitas Indonesia Library

Bera, Subhash Chandra

Microwave active devices and circuits for communication

" The book discusses active devices and circuits for microwave communications. It begins with the basics of device physics and then explores the design of microwave communication systems including analysis and the implementation of different circuits. In addition to classic topics in microwave active devices, such as p-i-n diodes, Schottky diodes, step recovery diodes, BJT, HBT, MESFET, HFET, and various microwave circuits like switch, phase shifter, attenuator, detector, amplifier, multiplier and mixer, the book also covers ... "

Singapore: Springer Nature, 2019

e20509252

eBooks Universitas Indonesia Library

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