Hasil Pencarian  ::  Simpan CSV :: Kembali

"This book describes the key theoretical techniques for semiconductor research to quantitatively calculate and simulate the properties. It presents particular techniques to study novel semiconductor materials, such as 2D heterostructures, quantum wires, quantum dots and nitrogen containing III-V alloys. The book is aimed primarily at newcomers working in the field of semiconductor physics to give guidance in theory and experiment. The theoretical techniques for electronic and optoelectronic devices are explained in detail."

"This book presents a new, sustainable roadmap towards ultra-low-energy (femto-Joule), high-performance electronics. The focus is on the energy-efficiency of the various chip functions: sensing, processing, and communication, in a top-down spirit involving new architectures such as silicon brains, ultra-low-voltage circuits, energy harvesting, and 3D silicon technologies. Recognized world leaders from industry and from the research community share their views of this nanoelectronics future. They discuss, among other things, ubiquitous communication based on mobile companions, health and care supported by autonomous implants and by personal carebots, safe and efficient mobility assisted by co-pilots equipped with intelligent micro-electromechanical systems, and internet-based education for a billion people from kindergarden to retirement."

"Riset ini difokuskan pada karakteristik linier arus-tegangan dioda P-I-N silikon skala nano doping tinggi dalam rentang temperatur dari 50K hingga 250 K serta karakteristik arus-tegangan dan konduktansi dioda P-N Silikon skala nano doping tinggi pada temperatur 5,5K. Untuk itu dioda P-N dan P-I-N dengan konsentrasi doping tinggi difabrikasi pada wafer ultra tipis berstruktur silicon-oninsulator (SOI). Dari hasil fabrikasi telah diperoleh konsentrasi doping tinggi Boron dan Phosphorus pada divais dioda mencapai 1×1020 cm-3 and 2×1020 cm-3, berturut-turut. Pengukuran karakteristik arus-tegangan dioda P-I-N silikon skala nano doping tinggi dilakukan pada beberapa divais dengan lapisan intrinsik sepanjang 200 nm dan 700 nm. Linieritas arus pada rentang forward bias dari 1,5 V hingga 2,0 V dan rentang temperatur dari 50 K hingga 250 K menunjukkan divais ini sesuai untuk sensor temperatur rendah. Pada pengukuran juga diperoleh data bahwa dioda P-I-N silikon skala nano doping tinggi menghasilkan arus yang lebih tinggi saat temperatur diturunkan dalam rentang forward bias dari 1,5 V hingga 2,0 V. Selain itu juga diperoleh data bahwa divais skala nano dengan lapisan intrinsik yang lebih panjang dan lebih lebar akan menghasilkan arus yang lebih tinggi pada rentang forward bias dari 1,5 V hingga 2,0 V dan temperatur dari 50K hingga 250K. Hasil pengukuran pada dioda P-N silikon skala nano doping tinggi pada rentang forward bias hingga 0,1 Volt maupun rentang reverse bias hingga -0,1 Volt menghasilkan beberapa puncak konduktansi yang menunjukkan kesesuaian nilai dengan level energi density of state dua dimensi (2D DOS) dan level energi kombinasi phonon pada temperatur 5,5K. Pada forward bias, level energi diskret heavy hole, light hole, serta kombinasi phonon TA, LA, TO dan LO berkontribusi signifikan pada puncak konduktansi dalam rentang tegangan hingga 0,1 Volt. Demikian juga halnya pada reverse bias, level energi diskret elektron 2-fold valley, 4-fold valley, serta kombinasi phonon TA, LA, TO dan LO berkontribusi signifikan pada puncak konduktansi dalam rentang tegangan hingga -0,1 Volt. Transport elektron pada dioda P-N Silikon dalam skala nano doping tinggi akan mengalami puncak konduktansi saat elektron memiliki energi yang sama dengan level diskret energi 2D DOS. Hal ini membuktikan adanya phonon-assisted tunneling pada dioda P-N silikon skala nano doping tinggi.

---

This report is focused on linier current-voltage (I?V) characteristic of highly-doped nanoscale Silicon P-I-N diodes at temperature from 50K to 250K and also I-V and conductance characteristics of highly-doped nanoscale Silicon P-N diode at temperature 5.5K. For that purpose, we fabricated nano scale P-I-N and P-N diodes within ultra thin silicon-on-insulator (SOI) structures. From fabrication, we achieved high doping concentrations of Boron and Phosphorus in SOI diodes, 1×1020 cm-3 and 2×1020 cm-3, respectively.

Measurement of current-voltage characteristics of highly-doped nanoscale silicon PIN diode is performed on devices with intrinsic layer length of 200 nm and 700 nm. The current linearity under forward bias range from 1.5 V to 2.0 V and temperature range from 50K to 250K shows that these devices are suitable for lowtemperature sensor. The measurement data shows also that highly-doped nanoscale silicon PIN diode produces higher current when the temperature is lowered under forward bias from 1.5 V to 2.0 V. In addition, the data shows that nanoscale devices with longer and wider intrinsic layer would generate higher current under forward bias range from 1.5 V to 2.0 V and temperature from 50K to 250K.

Measurement of highly-doped nanoscale silicon P-N diode under forward bias to 0.1 Volt and also reverse bias to -0.1 Volt results conductance peaks that show relationship with two-dimensional density of state (2D DOS) and phonon combination energy level at temperature 5.5K. Under forward bias, discrete energy level of heavy hole, light hole and phonon combination of TA, LA, TO and LO have significant contribution to conductance peaks in range 0.1 Volt. Also under reverse bias, discrete energy level of electron 2-fold valley, 4-fold valley and phonon combination of TA, LA, TO and LO have significant contribution to conductance peaks in range -0.1 Volt. Electron transport of highly-doped nanoscale silicon P-N diode will experience conductance peaks when it has equal energy with 2D DOS discrete energy level. It proves the existence of phonon-assisted tunneling on highly-doped nanoscale silicon P-N diode."

"In silicon nanoscale transistors, dopant atoms can significantly affect the transport characteristics, in particular at low temperatures. Investigation of coupling between neighboring dopants in such devices is essential in defining the properties for transport. In this work, we present an overview of different regimes of inter-dopant coupling, controlled by doping concentration and a selective doping process. Tunneling-transport spectroscopy can reveal the fundamental physics of isolated dopants in comparison with strongly-coupled dopants. In addition, observations of surface potential for Si nano-transistors can provide direct access to understanding the behavior of coupled dopants."

"This briefs volume describes the properties and structure of elementary excitations in isotope low-dimensional structures. Without assuming prior knowledge of quantum physics, the present book provides the basic knowledge needed to understand the recent developments in the sub-disciplines of nanoscience isotopetronics, novel device concepts and materials for nanotechnology. "

"This book arises from the NATO Advanced Study Institute “Technological Innovations in Detection and Sensing of CBRN Agents and Ecological Terrorism” held in Chisinau, Republic of Moldova in June 2010. It comprises a variety of invited contributions by highly experienced educators, scientists, and industrialists, and is structured to cover important aspects of the field that include developments in chemical-biological, and radiation sensing, synthesis and processing of sensors, and applications of sensors in detecting/monitoring contaminants introduced/dispersed inadvertently or intentionally in air, water, and food supplies. The book emphasizes nanomaterials and nanotechnology based sensing and also includes a section on sensing and detection technologies that can be applied to information security. Finally, it examines regional, national, and international policies and ethics related to nanomaterials and sensing. "

"This thesis addresses the fabrication and investigation of the optical response of gold nanoparticle arrays supported on insulating LiF(110) nanopatterned substrates. Motivated by the discovery of the intriguing effects that arise when electromagnetic radiation interacts with metallic nanostructures, the thesis focuses on the application of bottom-up approaches to the fabrication of extended-area plasmonic nanostructures, and the optimization of their optical response. By developing a sophisticated effective-medium model and comparing the experimental findings with model calculations, the author explores the role of the interparticle electromagnetic coupling and array dimensionality on the collective plasmonic behavior of the array, giving insights into the physical mechanisms governing the optical response."

"Nonlinear photonics and novel optical phenomena contains contributed chapters from leading experts in nonlinear optics and photonics, and provides a comprehensive survey of fundamental concepts as well as hot topics in current research on nonlinear optical waves and related novel phenomena. The book covers self-accelerating airy beams, integrated photonics based on high index doped-silica glass, linear and nonlinear spatial beam dynamics in photonic lattices and waveguide arrays, the theory of polariton solitons in semiconductor microcavities, and terahertz waves."

"This volume documents the first International Workshop on Atomic Scale Interconnection Machines organised by the European Integrated Project AtMol in June 2011 in Singapore. The four sessions, discussed here in revised contributions by high level speakers, span the subjects of multi-probe UHV instrumentation, atomic scale nano-material nanowires characterization, atomic scale surface conductance measurements, surface atomic scale mechanical machineries. This state-of-the-art account brings academic researchers and industry engineers access to the tools they need to be at the forefront of the atomic scale technology revolution."