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"We propose a simple design of 1×3 optical power splitter which uses gallium nitride (GaN) on sapphire. The design consists of widely used large cross section input rib waveguide, a rectangular multimode interference (MMI) structure, and three-branch rib waveguides. The MMI structure is selected since their attractive performances, such as compactness, low excess loss, wide bandwidth and ease to fabricate. The power splitter is designed for the third telecommunication window, i.e., l = 1.55 µm. Optimization of the geometrical structure parameters for the design is conducted theoretically utilizing 3D FD-BPM method. It is found that the power splitter exhibits excess loss of 0.46 dB and imbalanced of 0.001 dB at l = 1.55 µm for ..."

"We propose a simple design of 1×3 optical power splitter which uses gallium nitride (GaN) on sapphire. The design consists of widely used large cross section input rib waveguide, a rectangular multimode interference (MMI) structure, and three-branch rib waveguides. The MMI structure is selected since their attractive performances, such as compactness, low excess loss, wide bandwidth and ease to fabricate. The power splitter is designed for the third telecommunication window, i.e., l = 1.55 µm. Optimization of the geometrical structure parameters for the design is conducted theoretically utilizing 3D FD-BPM method. It is found that the power splitter exhibits excess loss of 0.46 dB and imbalanced of 0.001 dB at l = 1.55 µm for"

"In line with the increasing need for higher performance for optical and photonic telecommunications equipment at the lowest possible cost, the need for supporting equipment is also increasing. One of these components is an optical power splitter. This component is needed in network systems to distribute light to other components, especially multi-channel optical power separators to support larger network systems. One of the materials developed as a photonic device material from group III-nitride is gallium nitride (GaN). Besides having a large direct bandgap (3.4eV), GaN also has good resistance to temperature changes. Thus, GaN-based power splitters are an interesting research topic to obtain more improvements, innovations and inventions for future demands. In this research, an optical power splitter design is proposed based on the 1 × 8 multimode interference (MMI) structure. The design has been carried out theoretically using 3D FD-OptiBPM on GaN material. Structural modeling using 300 nm AlN and 200 nm AlGaN as a buffer layer on a sapphire substrate material. Numerical experiments were carried out at the optical telecommunications wavelength at = 1.55 m with the effective refractive index of the coating used =2.279±0.001 and =2.316±0.001. The results showed that the optimum width and thickness of the rectangular input channel and taper-shaped output channel was 4 m, and only supported single mode propagation. From the experimental simulation results, it is shown that the MMI-based optical power separator with a total length of 2010 m and a width of 85 m is the best result. It is also shown that the output power is split almost uniformly into eight output channels with a relative output power of 0.96 on the output channel, 0.28 dB of excess loss and 0.28 dB of power imbalance. 13 dB. "