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"Kristal tunggal betaine phosphate disintesis dengan metode solution growth. Kristal berukuran terbesar digerus sehingga menjadi bubuk untuk pengukuran difraksi sinar-X, bercuplikan bubuk. Data difraksi sinar-X dianalisis dengan menggunakan perangkat lunak GSAS untuk mendapatkan informasi mengenai struktur kristal, Struktur kristal digambar dengan ORTEP (bagian dari GSAS). Hasilnya, pada temperatur 30°C dan 120°C, Betaine Phosphate mempunyai sistem kristal monoklinik dan masing-masing memiliki grup ruang P21 /C dan P21 /m dengan CT= 11,051 (1) A, £=7,840(2) A, c= 12,918(6) A, p= 119,590( 12) A, dan o=l 1,099(1) A, £=7,894(1) A, c=6,535(l) A, {3=1 19,783(12) A.

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Single crystalline betaine phosphates have been synthesized by the solution growth method. The biggest size of the crystals were ground for X-ray diffraction measurement of the powder sample. The diffraction data were analyzed using GSAS software resulting refined crystal structural parameters. Crystal structures were drawn with ORTEP. The results were that at temperature 30°C and 120°C betaine phosphate crystallizes in monoclinic P21/C and P2l/m with 0=11.051(1) A, £=7.840(2) A, c=12.918(6) A, (5=119.590(12) A, and o=l 1.099(1) A, £=7.894(1) A, c=6.535(l) A, 0=119.783(12) A, respectively."

"Data XRD dari nanokomposit Ti-Si-N telah dianalisis menggunakan program GSAS berbasis metode Rietveld untuk mengidentifikasa fasa-fasa pembentuk serta komposisinya dan mencari pengaruhnya terhadap kekerasan material tersebut. Telah ditemukan fasa-fasa baru dalam sampel tersebut, disamping fasa-fasa nanokomposit nc-TiN/a-Si3N4 & a-/nc-TiSi2 yang telah banyak dikenal. Dari fasa-fasa kristal yang diperoleh, setelah dilakukan perhitungan fraksi fasa amorf Si3N4 dan TiSi2 maka diperoleh bahwa kekerasan optimal terjadi pada kandungan a-Si3N4 8 wt.%.

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Phase composition analysis using rietveld methode and it?s influence to the hardness of Ti-Si-N nanocomposites. XRD data of nanocomposites Ti-Si-N have been analysed using GSAS based on Rietveld Method in order to identify phases and their composition as well as its influence on the hardness of these nanocomposites. Several new phases have been found in the sample beside the nc-TiN/a-Si3N4& a-/nc-TiSi2 that have been known widely. From the obtained crystalline phase, after the calculation of amorf Si3N4 and TiSi2 phase fraction, it is found that the optimum hardness can be reached when the fraction of a-Si3N4 phase around 8 wt.%."

"Sifat ferroelektrik lapisan tipis BST yang didoping dengan In2O3 dan struktur kristal serta morfologi permukaannya telah diuji. Lapisan tipis BST 1M dan BST 1M doping In2O3 dengan variasi prosentase doping (1%, 2%, 4%) dideposisikan pada substrat Si (111). Proses penumbuhan lapisan tipis pada substrate menggunakan metode CSD (chemical solution deposition) dengan teknik spin-coating pada kecepatan putar 3000 rpm selama 30 detik. Proses annealing dilakukan pada temperatur 750ºC untuk substrat Si (111) selama 1 jam. Sistem kristal dan orientasi lapisan tipis BST dan BIST diuji dengan difraksi sinar-X dan dilakukan penghalusan (refinement) dengan analisa Rietveld menggunakan GSAS.Hasil penghalusan dengan GSAS diperoleh fasa BST yang terkandung pada Lapisan Tipis BST 1M, BIST 1M 1%, 2% dan 4% (substrat silikon) bersesuaian dengan Ba0,5Sr0,5TiO3 (ICDD) dengan sistem kristal kubik dan parameter kisi (a) berturut-turut 3,947Å, 3,953Å, 3,971Å, 3,970Å. Hasil SEM lapisan tipis BST dan BIST 1M menunjukkan bahwa morfologi permukaan relatif sudah homogen. Nilai polarisasi spontan Lapisan Tipis pada substrat Si (111) untuk BIST 1M 1% adalah 22,964µC.cm-2, BIST 1M 2% adalah 14,544µC.cm-2 dan BIST 1M 4% adalah 34,768µC.cm-2.

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The ferroelectrics properties of BST thin film doped by In2O3 and crystal structure and its morphologic surface have been tested. The BST 1M and BST 1M thin films doped by In2O3 with varied percentage of doping (1%, 2%, 4%) are deposited on Si substrate (111). The process of growing thin films on Si substrate uses CSD (chemical solution deposition) method with spin-coating technique at spinning speed of 3000 rpm for 30 seconds. For Si substrate (111), annealing process runs at 750ºC for one hour.

Crystal system BST and BIST thin films orientation is tested using X-Ray diffraction, while refinement is conducted with rietveld analysis using GSAS. Refined items with GSAS produce BST phases contained in thin films of BST 1M, BIST 1M 1%, 2% and 4% (silicone substrate) corresponding to Ba0,5Sr0,5TiO3 (ICDD) with cubic crystal system and lattice constant (a) of 3,947Å, 3,953Å, 3,971Å, 3,970Å respectively. Results of BST and BIST thin films for SEM indicate that the surface morphology is relatively homogeneous. The values of thin film spontaneous polarization on Si substrate (111) for BIST 1M 1%, BIST 1M 2%, and BIST 1M 4% are respectively 22,964µC.cm-2, 14,544µC.cm-2, and 34,768µC.cm-2."

"Analisis Rielveld dengan program EXPGUI-GSAS dapat digunakan untuk meneliti kekristalan material. Pada penelitian dilakukan penghalusan parameter-parameier struktur liga sampel film tipis PIZT diatas subslrat Pi (200)/Si(VSi(tOO) dengan variasi doping indium, didapat indikator keberhasilan R-pola (Rp) pada selang (5,77-10,36)%, R-pola dengan pemberat (wRp) pada selang aniara (8,59-15,35)% dan Goodness of fit (GoF) pada selang antara 1,036-5,462. Indikator yang didapal secara fisik dapat ditandai dengan miripnya kurva kalkulasi dengan kurva eksperimen. Semua sampel PIZT substrat Pt menunjukkan sistem kristal kubik dengan grup ruang Fm3m. Selain itu didapat nilai parameier kisi hasil penghalusan yang mendekati nilai pada international Centre for Diffraction Data (ICDD).

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We have use Rietveld analysis on EXPGUI-GSAS plalform to examine the crystalinity of PIZT on Pt Substrate. In this experiment, we have used 3 samples of PIZT thin film in the platinum substrate with variation on the percentage of indium doping. The value of efficacy indicator for 3 specimens included R-Pattern (Rp) between (5,77-10,36)%, weighted of R-Pattern ( wRp) between ( 8,59-15.35)% and Goodness of Fit (GoF) between 1,036-5,462. The value of efficacy indicator marked physically as alike between the calculated curve and experiment curve. Most of the sample of PIZT thin films in platinum substrate show that the crystal structure are cubic with space group Fm3m and lallice parameter near the value on the Powder Diffraction Data-International Center for Diffraction Data."

"Telah dibuat program komputer dalam lingkungan Delphi untuk analisis kualitatif material menggunakan metode Hanawalt. Data difraksi sinar-x dipcroleh dari XRD Phillips yang ada di program studi Ilmu Material Universitas Indonesia. Hasil analisis program dibandingkan dengan database yang ada pada PDF (Powder Diffraction File) dari ICDD (International Centre for Diffraction Data) . Untuk jarak kisi ternyata memiliki kesesuaian yang baik. Kesemua data kemudian diproses lebih lanjut dengan GSAS (General Structure Analysis System). DiperoIeh konsistcnsi antara program Delphi yang dibuat dengan analisis dengan GSAS.

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A Computer Program in Delphi environment has been completed to qualitative analyze using Hanawalt Method. The x-ray diffraction data were obtained by XRD Phillips machine in the Material Science program University of Indonesia. The Delphi result were compared by the database in the PDF (Powder Diffraction File) of ICDD (International Centre for Diffraction Data) , good agreement was found for the d space. All the data were subject to be analyzed further by the GSAS (General Structure Analysis System)."

"Telah dilakukan analisa mengenai pengaruh penambahan 0.5 inol berat Mn terhadap fasa dan Struktur kristal barium titanat (BaTiO:,). Cuplikan diperoleh dengan metoda metalurgi serbuk dengan bahan dasar BaCQ-,. MnO_, dan FiO: yang merupakan grade reagen dari E-Merck, dengan perbandingun masing-masing 1 : 0,5 : 0,5. Difraktogram sinar-X dengan A, (Co K.O.) "= 1,7889 A dan scan secara kontinu pada temperatur kamar dianalisis menggunakan program kristalografi GSAS. Analisis struktur metnperlihatkan bahwa bahan terdiri dari 5 (lima) fasa, BaMn05Ti05O3 sebagai fasa utama dengan grup ruaiig P4mm, parameter kisi a dan c masing-masing 3,999 A dan 4,025 A, faktor pencocokan (i educed x ) =- 2,175 dan 45 variabel. Sedangkan 4 (empat ) fasa pengotor tersebut masing-masing memiliki fraksi berat yaitu BaCO., (45,83%); MnO2 (8.47%); TiO: (20,36%) dan MmTi: (6,75%) masing-masing dengan grup ruang Pnma, P 42/mnm, Pbca dan P 63/mmc.

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The effect of 0.5 weight mol Mn on phase and crystal structure of barium titanate has been analyzed. The best sampel in this study were synthesized using powder metallurgy with stoichiometric amounts of BaCCh, MnO2 and TiO2 that were reagents from E-Merck. The X-ray diffractograms which were obtained with continuous counts and X (Co Ka) = 1.7889 A at room temperature, were refined using the crystallographic software package GSAS. Structural analysis shows that sample consists of 5 (five) phase where the crystal is BaMni,5Ti()5O:, with the perovs kHe-type BaTiO, structure, the space group tetragonal P4mm, a = 3.999 A, t- - 4.025 A. the goodness of fit £ is of 2.175 with 45 variables and the residual parameters Rp and Rwp are of 18.8% and 24.2% respectively. The four phase impurity has a weight fraction is BaCO, (45.83%); MnO, (8.47%); TiO: (20,36%) and Mn:,Ti2 (6,75%) with the space group each are Pnma. P 42/mnm, 1 41/amd and P 63/mmc."