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Investigation of annealing effect on the forward bias and leakage current changes of P-Type 6H-Sic schottky diodes with SiO2 ramp profile after irradiated UP To 1.75 MGY (Application for nuclear fuel elements facilities)
" Annealing effect on the electrical properties change of P - type 6H-Sic schottky diodes with SiO2 ramp profile after irradiated up to 1.75 MGy at RT (Room Temperature) were investigated. A perpendicular edge termination based on oxide ramp profile around the schottky contact is used on Al schottky rectifier fabricated on a 10 um p--type 6H-SiC epi-layer on P-type 6H-SiC substrate (3.5 off, Si face) Na : 5.9 x 10 15/cm ... "
Artikel Jurnal  Universitas Indonesia Library