Ditemukan 1 dokumen yang sesuai dengan query
Imam Prasaja
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The thin film of Indium Tin Oxide (ITO) whose the final thickness between 502 nm - 850 nm, various oxygen partial pressure between 0 - 32 mPa and the deposition rate 1,2 nm/s, 2,2 nm/s and 3,5 nm/s have already made by DC magnetron sputtering method. Having studied about the influence of oxygen partial pressure and deposition rate to electrical property of ITO : resistivity, conductivity, carrier charge concentration, mobility; temperature coefficient and activation energy. ...
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Depok: Universitas Indonesia, 1999
T-Pdf
UI - Tesis Membership Universitas Indonesia Library
