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"Telah dilakukan penelitian tentang studi sifat listrik dan optis bahan perovskite Ba(Fe,Ti)O3. Pada studi ini kami menguji sifat material multiferroik lewat difraksi sinar X dan spektroskopi impedansi. Hasil difraksi sinar X (XRD) menunjukkan bahan memiliki fasa tunggal dengan sistem kristal heksagonal dan space group P63/mmc. Struktur kristal Ba(Fe,Ti)O3 menjadi random perovskite ketika sampel dibuat dengan komposisi Fe dan Ti yang seimbang, sehingga mempengaruhi seluruh sifat bahan BaFe0,5Ti0,5O3. Pengukuran impedansi yang dinyatakan dalam bentuk Nyquist plot dan bode plot memperlihatkan bahwa penambahan Fe menyebabkan peningkatan konduktivitas ac dan melemahkan feroelektrisitas. Fitting rangkaian ekivalen dengan program Zsimpwin menunjukkan kemunculan induktansi (L) dan Constant Phase element (CPE) sebagai akibat penambahan ion magnetik Fe dan dispersi frekuensi pada sampel. Data hasil pengukuran reflektansi dengan menggunakan spektrofotometer UV VIS menunjukkan nilai celah energi berada dalam rentang 0,85 - 3,37 eV yang membuat bahan berpotensi menjadi semikonduktor.

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We have been investigating Study of electrical and Optical Properties Sample Perovskite Ba(Fe,Ti)O3. In this study, we have systematically measured the multiferroic material properties using XRD and impedance simulation. The result of X-ray diffraction (XRD) indicates that the material has a single phase with hexagonal crystal and space group P63/mmc. Random perovskite structure is shaped when the sample made with balanced composition between Fe and Ti and thus affecting the whole nature of the material BaFe0, 5Ti0,5O3. Impedance measurements which are signed in form of nyquist and bode plot show that the addition of Fe leds to an increase of ac conductivity and weakend ferroelectricity. Fitting the equivalent circuit with Zsimpwin program pilots the appearance of inductance (L) and constant phase element (CPE) as a result of adding magnetic Fe ions and frequency dispersion of the sample. Reflectance measurement data using a UV VIS spectrophotometer showed the value of the energy gap is in the range 0.85 to 3.37 eV which could potentially be a semiconductor."

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