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"Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation. "

"This book presents the basic techniques available to design low power RF CMOS analogue circuits. It gives circuit designers a complete guide of alternatives to optimize power consumption and explains the application of these rules in the most common RF building blocks, LNA, mixers and PLLs. It is set out using practical examples and offers a unique perspective as it targets designers working within the standard CMOS process and all the limitations inherent in these technologies."

"This book presents high-/mixed-voltage analog and radio frequency (RF) circuit techniques for developing low-cost multistandard wireless receivers in nm-length CMOS processes. Key benefits of high-/mixed-voltage RF and analog CMOS circuits are explained, state-of-the-art examples are studied, and circuit solutions before and after voltage-conscious design are compared. Three real design examples are included, which demonstrate the feasibility of high-/mixed-voltage circuit techniques. Provides a valuable summary and real case studies of the state-of-the-art in high-/mixed-voltage circuits and systems. Includes novel high-/mixed-voltage analog and RF circuit techniques – from concept to practice. Describes the first high-voltage-enabled mobile-TVRF front-end in 90nm CMOS and the first mixed-voltage full-band mobile-TV Receiver in 65nm CMOS. Demonstrates the feasibility of high-/mixed-voltage circuit techniques with real design examples."

"Divais SET dapat digunakan untuk banyak aplikasi seperti single electron switching, single photon detector, single electron detector, quantum bit memory, dll. Untuk aplikasi seperti quantum bit memory, diperlukan dua buah quantum dot (QD) yang disusun secara paralel. Pada thesis ini, dua buah SET yang disusun secara paralel disimulasikan dengan software SIMON 2.0 untuk mendapatkan parameter-parameter yang diperlukan guna mengontrol perpindahan elektron antar QD. Dari hasil simulasi, didapatkan bahwa dua buah SET yang disusun secara paralel bertindak sebagai dua buah SET yang independen pada saat junction capacitance antar QD bernilai di atas 5×10–18 F. Perpindahan elektron antar QD terjadi apabila terdapat perbedaan potensial pada dua QD yang melebihi suatu nilai minimum. Nilai minimum tersebut dipengaruhi oleh resistansi dan kapasitansi junction capacitance. Semakin besar resistansi, nilai minimum perbedaan potensial yang diperlukan akan semakin membesar sedangkan apabila kapasitansi semakin besar, nilai minimum perbedaan potensial yang diperlukan akan semakin mengecil.

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SET devices can be used in many applications, such as single electron switching, single photon detector, single electron detector, quantum bit memory, etc. For applications such as quantum bit memory, two quantum dots (QDs) in parallel position are required. In this thesis, two SETs in parallel configuration are simulated with SIMON 2.0 software in order to obtain parameters which are needed to control the interdot electron movement. From the results of the simulation, it is obtained that two SETs in parallel configuration will act as two independent SETs when the interdot junction capacitance is above 5×10–18 F. The interdot electron movement occurs when a potential difference exist between the two QDs. The same potential difference must surpass the required minimum value which is influenced by the interdot resistance and capacitance. The bigger the resistance, the required minimum value of potential difference will be increased while the bigger the capacitance, the required minimum value of potential difference will be decreased."